AU5517D Просмотр технического описания (PDF) - Philips Electronics
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AU5517D Datasheet PDF : 18 Pages
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Philips Semiconductor
Dual operational transconductance amplifier
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VS
PD
Supply voltage1
Power dissipation,
Tamb = 25 °C (still air)2
PARAMETER
NE5517N, NE5517AN
NE5517D, AU5517D
VIN
ID
IABC
ISC
IOUT
Tamb
Differential input voltage
Diode bias current
Amplifier bias current
Output short-circuit duration
Buffer output current3
Operating temperature range
NE5517N, NE5517AN
AU5517D
VDC
DC input voltage
Tstg
Storage temperature range
Tsld
Lead soldering temperature (10 sec max)
NOTES:
1. For selections to a supply voltage above ±22 V, contact factory
2. The following derating factors should be applied above 25 °C
N package at 12.0 mW/°C
D package at 9.0 mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
Product data
NE5517/NE5517A/
AU5517
RATING
44 VDC or ±22
1500
1125
±5
2
2
Indefinite
20
0 °C to +70 °C
–40 °C to +125 °C
+VS to –VS
–65 °C to +150 °C
230
UNIT
V
mW
mW
V
mA
mA
mA
°C
°C
°C
°C
2002 Dec 06
4
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