PMBD7000 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

PMBD7000

Double high-speed switching diode

NXP Semiconductors. 

NXP Semiconductors

PMBD7000

Double high-speed switching diode

102

IFSM

(A)

10

1

mbg704

105

IR

(nA)

104

103

(1)

(2)

(3)

102

mbg378

10−1

1

10

102

103

104

tp (μs)

Based on square wave currents.

Tj = 25 °C; prior to surge

Fig 3. Non-repetitive peak forward current as a

function of pulse duration; maximum values

0.8

Cd

(pF)

0.6

10

0

100

Tj (°C)

200

(1) VR = 50 V; maximum values

(2) VR = 30 V; typical values

(3) VR = 50 V; typical values

Fig 4. Reverse current as a function of junction

temperature

mbg446

0.4

0.2

0

0

4

8

12 VR (V) 16

f = 1 MHz; Tamb = 25 °C

Fig 5. Diode capacitance as a function of reverse voltage; typical values

PMBD7000

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 16 September 2010

© NXP B.V. 2010. All rights reserved.

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