CY7C1061DV18-15BV1XI Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1061DV18-15BV1XI Datasheet PDF : 18 Pages
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CY7C1061DV18
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied .......................................... –55 C to +125 C
Supply voltage on
VCC to relative GND [1] ..............................–0.2 V to +2.45 V
DC voltage applied to outputs
in High Z state [1] .......................................–0.2 V to +2.45 V
DC input voltage [1] ....................................–0.2 V to +2.45 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(per MIL-STD-883, method 3015) ........................... >2001 V
Latch-up current ..................................................... >200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 C to +85 C
VCC
1.7 V to 2.2 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VOH
Output HIGH voltage
VOL
Output LOW voltage
VIH
Input HIGH voltage
VIL
Input LOW voltage[1]
IIX
Input leakage current
IOZ
Output leakage current
ICC
VCC operating supply current
ISB1
Automatic CE power-down
current – TTL inputs
ISB2
Automatic CE power-down
current – CMOS inputs
Test Conditions
Min VCC, IOH = –0.1 mA
Min VCC, IOL = 0.1 mA
GND < VIN < VCC
GND < VOUT < VCC, output disabled
Max VCC, f = fMAX = 1/tRC,
IOUT = 0 mA CMOS levels
CE1 > VIH, CE2 < VIL, Max VCC,
VIN > VIH or VIN < VIL, f = fMAX
CE1 > VCC – 0.2 V, CE2 < 0.2 V,
Max VCC, VIN > VCC – 0.2 V, or VIN < 0.2 V, f = 0
-15
Unit
Min
Max
1.4
–
V
–
0.2
V
1.4
–0.2
VCC + 0.2 V
0.4
V
–1
+1
A
–1
+1
A
–
150
mA
–
30
mA
–
25
mA
Note
1. VIL (min) = –2.0 V for pulse durations of less than 20 ns.
Document Number: 001-08350 Rev. *I
Page 5 of 18
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