BZD27C82P-E3-18 Просмотр технического описания (PDF) - Vishay Semiconductors
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BZD27C82P-E3-18 Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZD27C Series
Vishay Semiconductors
10
Typ. VF
1
Max. VF
IRSM
(%)
100
90
50
t1 = 10 µs
t2 = 1000 µs
0.1
0.6 0.8 1.0 1.2 1.4 1.6
17411
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
C5V1P C6V8P C12P C18P
1000
100
C27P
C51P
C200P
10
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
VR - Reverse Voltage (V)
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
3.0
2.5
RthJL = 30K/W
2.0
1.5
1.0 RthJA = 180K/W
0.5
0
0
22774
25 50 75 100 125 150 175
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
10
t1
t
17415
t2
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
14
Chart valid for TJ = 175 °C; TA = 25 °C, and a duty
cycle of D = 0.5
12
Duty cycle D
D=
tp
tp
10
T
T
8
PZSM
=
D
x
TJ
(Rth
max. - TA
- Zth (tp)) +
Zth
(tp)
6
4 Typ. PZSM = f (tp)
P (RthJL)
22987
2
P (RthJA)
0
0.001 0.01
0.1
1
10
tp Pulse Width (s)
100 1000
Fig. 5 - Typical Repetitive Peak Surge Power
1000
Typ. Zth = f (tp)
100 RthJA 3 mm x 3 mm pad
10
RthJL
1
0.001 0.01 0.1
1 10 100 1000
22988
tp Pulse Width (s)
Fig. 6 - Typical Thermal Impedance vs. Time
Rev. 1.6, 16-Feb-18
4
Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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