DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BZD27C82P-E3-18 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
BZD27C82P-E3-18
Vishay
Vishay Semiconductors Vishay
BZD27C82P-E3-18 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
BZD27C Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
eSMP® Series
1
2
23018
23019
SMF (DO-219AB)
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VBR
VWM
PPPM
TJ max.
VZ specification
Circuit configuration
3.6 to 200
5 to 100
7 to 188
6.2 to 160
150
175
Pulse current
Single
Polarity
Uni-directional
UNIT
V
mA
V
V
W
°C
FEATURES
• Sillicon planar Zener diodes
Available
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
• Wave and reflow solderable
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, and commercial grade
• Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
BZD27C Series
ORDERING CODE
BZD27C3V6P-E3-08 to BZD27C200P-E3-08
BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08
BZD27C3V6P-E3-18 to BZD27C200P-E3-18
BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
3000 per 7" reel (8 mm tape)
30 000/box
10 000 per 13" reel (8 mm tape)
50 000/box
PACKAGE
PACKAGE NAME
SMF (DO-219AB)
WEIGHT
15 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
WHISKER TEST
ACC. JESD 201
class 2
SOLDERING CONDITIONS
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Non repetitive peak surge power dissipation (2)
Junction to lead
Junction to ambient air
TL = 105 °C
TA = 30 °C (1)
100 μs square pulse
10/1000 μs waveform
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads
(40 μm thick)
Ptot
Ptot
PZSM
PRSM
RthJL
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (40 μm thick)
(2) TJ = 25 °C prior to surge
VALUE
2300
800
300
150
30
180
175
-65 to +175
-65 to +175
UNIT
mW
mW
W
W
K/W
K/W
°C
°C
°C
Rev. 1.6, 16-Feb-18
1
Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]