BY268(1998) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

BY268
(Rev.:1998)

Silicon Mesa Rectifiers

Vishay Semiconductors 

Silicon Mesa Rectifiers

Features

D Glass passivated junction

D Hermetically sealed package

BY268.BY269

Vishay Telefunken

Applications

High voltage fast rectifier

94 9539

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions Type Symbol

Value

Unit

Peak reverse voltage, non repetitive

BY268 VRSM

1600

V

BY269 VRSM

1800

V

Reverse voltage

BY268 VR

1400

V

BY269 VR

1600

V

Peak forward surge current

tp=10ms,

half sinewave

IFSM

20

A

Average forward current

Junction and storage temperature range

IFAV

0.8

A

Tj=Tstg –65...+175

°C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Junction ambient

Test Conditions

Symbol

Value

Unit

on PC board with spacing 25mm

RthJA

110

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

IF=0.4A

Reverse current

VR=1400V

VR=1600V

VR=1400V, Tj=100°C

VR=1600V, Tj=100°C

Reverse recovery time IF=0.5A, IR=1A, iR=0.25A

Type Symbol Min Typ Max Unit

VF

BY268

IR

BY269

IR

BY268

IR

BY269

IR

trr

1.25 V

1 2 mA

1 2 mA

15 mA

15 mA

400 ns

Document Number 86005

Rev. 2, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

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