BDX33B Просмотр технического описания (PDF) - Fairchild Semiconductor
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BDX33B Datasheet PDF : 5 Pages
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Typical Characteristics
100k
10k
1k
10
VCE = 3 V
1
I = 250 I
C
B
100
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain
10.0
VCE = 3 V
7.5
5.0
2.5
0.0
0
1
2
3
4
VBE [V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
100
IC MAX. (Pulsed) 5 ms 1 ms 100 us
10
IC MAX. (Continuous)
DC
10 us
1
0.1
1
BDX33
BDX33A
BDX33B
BDX33C
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
0.1
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
1000
f=1MHz
IE=0
100
10
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 4. Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
Tc [oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
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