BDX33B Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

BDX33B

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

BDX33/A/B/C

Power Linear and Switching Applications

• High Gain General Purpose

• Power Darlington TR

• Complement to BDX34/34A/34B/34C respectively

1

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

: BDX33

: BDX33A

: BDX33B

: BDX33C

VCEO

Collector-Emitter Voltage

: BDX33

: BDX33A

: BDX33B

: BDX33C

IC

ICP

IB

PC

TJ

TSTG

Collector Current (DC)

*Collector Current (Pulse)

Base Current

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Value

45

60

80

100

45

60

80

100

10

15

0.25

70

150

- 65 ~ 150

Units

V

V

V

V

V

V

V

V

A

A

A

W

°C

°C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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