BCX42E6327 Просмотр технического описания (PDF) - Infineon Technologies
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BCX42E6327 Datasheet PDF : 8 Pages
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PNP Silicon AF and Switching Transistor
• For general AF applications
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BCX41 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCX42
3
2
1
Type
BCX42
Marking
DKs
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation
TS ≤ 79 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
125
125
5
800
1
100
200
330
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 215
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
A
mA
mW
°C
Unit
K/W
1
2011-10-04
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