BCW68GLT3G(2009) Просмотр технического описания (PDF) - ON Semiconductor
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BCW68GLT3G Datasheet PDF : 3 Pages
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BCW68GLT1G
General Purpose Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−45
Vdc
Collector−Base Voltage
VCBO
−60
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
DG MG
G
DG = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BCW68GLT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
BCW68GLT3G SOT−23 10000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
BCW68GLT1/D
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