SPD06N80C3(2008_04) Просмотр технического описания (PDF) - Infineon Technologies
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SPD06N80C3 Datasheet PDF : 11 Pages
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SPD06N80C3
9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 6 A pulsed
SPD06N80C3
16
V
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPD06N80C3
A
12
0.2 VDS max
10 0.8 VDS max
10 1
8
6
4
2
0
0 5 10 15 20 25 30 35 40 nC 50
QGate
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
11 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
6
A
12 Avalanche energy
EAS = f (Tj)
par.: ID = 1.2 A, VDD = 50 V
250
mJ
200
175
4
150
3
125
100
2
TJ(Start) = 25°C
75
50
1
TJ(Start) = 125°C
25
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
0
25
50
75
100
°C
150
Tj
Rev. 2.4
Page 7
2008-04-11
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