IXFH16N80P Просмотр технического описания (PDF) - IXYS CORPORATION
Номер в каталоге
Компоненты Описание
производитель
IXFH16N80P Datasheet PDF : 5 Pages
| |||
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Fig. 7. Input Admittance
20
18
16
TJ = 125ºC
14
25ºC
12
- 40ºC
10
8
6
4
2
0
3
3.5
4
4.5
5
5.5
6
VGS - Volts
50
45
40
35
30
25
20
15
10
5
0
0.3
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
VSD - Volts
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
Coss
100
Fig. 8. Transconductance
28
24
20
TJ = - 40ºC
25ºC
16
125ºC
12
8
4
0
0 2 4 6 8 10 12 14 16 18 20 22 24
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 400V
I D = 8A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
1.00
0.10
10
0
Crss
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
F_16N80P (67) 04-28-06.xls
Share Link: 