IXFV16N80P Просмотр технического описания (PDF) - IXYS CORPORATION

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Компоненты Описание

производитель

IXFV16N80P

PolarHV™ Power MOSFET

IXYS CORPORATION 

IXFH 16N80P IXFT 16N80P

IXFV 16N80P IXFV 16N80PS

Symbol

gfs

Ciss

C

oss

C

rss

td(on)

tr

td(off)

tf

Qg(on)

Qgs

Qgd

RthJC

RthCS

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

VDS = 20 V; ID = 0.5 ID25, pulse test

V = 0 V, V = 25 V, f = 1 MHz

GS

DS

9 16

S

4600

pF

330

pF

23

pF

VGS = 10 V, VDS = VDSS, ID = 0.5 ID25

RG = 5 Ω (External)

27

ns

32

ns

75

ns

29

ns

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

71

nC

21

nC

23

nC

(TO-247)

0.27 °C/W

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

IS

VGS = 0 V

ISM

Repetitive

VSD

IF = IS, VGS = 0 V, pulse test

trr

IF = 25A, -di/dt = 100 A/μs

IRM

VR = 100V; VGS = 0 V

Q

RM

16 A

48 A

1.5 V

150 250 ns

7

A

0.7

μC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844

one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344 6,727,585 7,005,734 B2

6,710,405 B2 6,759,692 7,063,975 B2

6,710,463

6,771,478 B2 7,071,537

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