6N80K5 Просмотр технического описания (PDF) - STMicroelectronics

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6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

STMicroelectronics 

STF6N80K5, STFI6N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

dv/dt (4)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax )

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

VISO

Tj

Tstg

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s, TC = 25 °C)

Operating junction temperature range

Storage temperature range

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area

3. ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS

4. VDS ≤ 640 V

30

4.5(1)

2.8

18

25

1.5

85

4.5

50

2500

-55 to 150

Symbol

Rthj-case

Rthj-amb

Table 3. Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-amb

Value

5

62.5

Unit

V

A

A

A

W

A

mJ

V/ns

V/ns

V

°C

Unit

°C/W

DocID024664 Rev 4

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