FCP104N60F Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FCP104N60F Datasheet PDF : 8 Pages
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Typical Characteristics
Figure 1. On-Region Characteristics
100
VGS = 20.0V
15.0V
10.0V
8.0V
7.0V
6.5V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.2
VGS = 10V
0.1
VGS = 20V
0.0
0
*Note: TC = 25oC
22
44
66
88
110
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
100
*Note:
10 1. VGS = 0V
2. f = 1MHz
Coss
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
0.1
0.1
1
10
100
600
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
100 *Notes:
1. VDS = 20V
2. 250μs Pulse Test
10
150oC
25oC
-55oC
1
2
4
6
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10
150oC
1
25oC
0.1
-55oC
0.01
0.001
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 18.5A
0
0
20 40 60 80 100 120
Qg, Total Gate Charge [nC]
©2013 Fairchild Semiconductor Corporation
3
FCP104N60F Rev. C3
www.fairchildsemi.com
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