FCH104N60 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FCH104N60 Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
*Notes:
1. VGS = 0V
2. ID = 10mA
1.1
1.0
0.9
0.8
-100 -50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
300
100
10
Operation in This Area
1 is Limited by R DS(on)
10μs
100μs
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
20
16
12
8
4
0
0
120
240
360
480
600
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH104N60 Rev. C0
Figure 8. On-Resistance Variation
vs. Temperature
2.5
*Notes:
1. VGS = 10V
2. ID = 18.5A
2.0
1.5
1.0
0.5-100 -50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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