VS-40EPF10-M3 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-40EPF10-M3 Datasheet PDF : 9 Pages
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VS-40EPF1.PbF Series, VS-40EPF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
40 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.4
6.82
0.94
0.1
10
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
VALUES
450
6
1.8
0.5
UNITS
ns
A
μC
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC modified (JEDEC)
VALUES
-40 to +150
UNITS
°C
0.6
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(Ibf · in)
40EPF10
40EPF12
Revision: 11-Feb-16
2
Document Number: 94103
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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