SMP80MC-160 Просмотр технического описания (PDF) - STMicroelectronics
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SMP80MC-160 Datasheet PDF : 10 Pages
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SMP80MC
Characteristics
Figure 7.
Variation of thermal impedance Figure 8.
junction to ambient versus pulse
duration (Printed circuit board FR4,
SCu=35µm, recommended pad
layout)
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
C [VR] / C [VR=2V]
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
10
VR(V)
100
F =1MHz
VOSC = 1VRMS
Tj = 25°C
1000
Figure 9.
Test circuit 1 for dynamic IBO and VBO parameters
100 V / µs, di /dt < 10 A / µs, Ipp = 80 A
2Ω
U
10 µF
45 Ω
66 Ω 470 Ω
83 Ω
0.36 nF
46 µH
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A
26 µH
250 Ω
47 Ω
46 µH
U
60 µF
12 Ω
KeyTek 'System 2' generator with PN246I module
5/10
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