2SD2657KT146 Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

2SD2657KT146

Low frequency amplifier

ROHM Semiconductor 

Transistors

!Electrical characteristic curves

1000

VCE=2V

Ta=100°C

Pulsed

Ta=25°C

Ta=−40°C

100

10

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain

vs. collector current

2SD2657K

10

VBE(sat)

1

Ta=−40°C

Ta=25°C

Ta=100°C

IC/IB=20 /1

Pulsed

0.1

VCE(sat)

Ta=100°C

Ta=25°C

Ta=−40°C

0.01

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

1

Ta=25°C

Pulsed

0.1

IC/IB=50/1

IC/IB=20/1

IC/IB=10/1

0.01

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation voltage

vs. collector current

1

VCE=2V

Pulsed

0.1

Ta=100°C

Ta=25°C

Ta=−40°C

0.01

0.001

0

0.5

1

1.5

BASE TO EMITTER CURRENT : VBE (V)

Fig.4 Grounded emitter propagation

characteristics

1000

Ta=25°C

VCE=2V

f=100MHz

100

10

0.01

0.1

1

10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product

vs. emitter current

1000

100

Ta=25°C

VCE=5V

tstg f=100MHz

tf

tdon

10

tr

1

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.6 Switching time

1000

Ta=25°C

IC=0A

f=1MHz

100

Cib

Cob

10

1

0.1

1

10

100

EMITTER TO BASE VOLTAGE : VEB(V)

COLLECTOR TO BASE VOLTAGE : VCB(V)

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

10

1

0.1

1ms

DC

PW=100m10sms

Operation

0.01

Ta=25°C

0.001 Single Pulse

0.1

1

10

100

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.8 Safe Operating Area

2/2

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