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2SD2657KT146 Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание
производитель
2SD2657KT146
ROHM
ROHM Semiconductor ROHM
2SD2657KT146 Datasheet PDF : 3 Pages
1 2 3
Transistors
Low frequency amplifier
2SD2657K
2SD2657K
!Application
Low frequency amplifier
Driver
!Features
1) A collector current is large.
2) VCE(sat) 350mV
At IC = 1A / IB = 50mA
!External dimensions (Units : mm)
1.6
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
Abbreviated symbol : FZ
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
1.5
A
ICP
3
A
Power dissipation
Junction temperature
PC
200
mW
Tj
150
°C
Range of storage temperature Tstg 55~+150
°C
Single pulse, PW=1ms
!Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SD2657K
Taping
T146
3000
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
30
V IC=10µA
30
V IC=1mA
6
V IE=10µA
100
nA VCB=30V
100
nA VEB=6V
160 350 mV IC=1A, IB=50mA
270
680
VCE=2V, IC=100mA
330
MHz VCE=2V, IE=−100mA, f=100MHz
11
pF VCB=10V, IE=0A, f=1MHz
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