2SD2670TL Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

2SD2670TL

Low frequency amplifier

ROHM Semiconductor 

Transistors

Low frequency amplifier

2SD2670

zApplication

Low frequency amplifier

Driver

zFeatures

1) A collector current is large.

2) VCE(sat) : max.250mV

At lc=1.5A / lB=30mA

zExternal dimensions (Unit : mm)

TSMT3

(1) Base

(2) Emitter

(3) Collector

2.9

0.4

(3)

(1) (2)

0.95 0.95

1.9

1.0MAX

0.85

0.7

0~0.1

0.16

Each lead has same dimensions

2SD2670

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

ICP

Power siddipation

PC

Junction temperature

Tj

Range of storage temperature Tstg

∗1 Single pulse, Pw=1ms

∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate

Limits

15

12

6

3

6

500

1 ∗2

150

−55 to +150

Unit

V

V

V

A

A∗1

mW

W

°C

°C

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Collector output capacitance

∗ Pulse

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

Min. Typ. Max. Unit

Conditions

15

−

−

V IC=10µA

12

−

−

V IC=1mA

6

−

−

V IE=10µA

−

−

100

nA VCB=15V

−

−

100

nA VEB=6V

−

120 250 mV IC=1.5A, IB=30mA

270

−

680

− VCE=2V, IC=500mA ∗

−

360

−

MHz VCE=2V, IE=−500mA, f=100MHz ∗

−

30

−

pF VCB=10V, IE=0A, f=1MHz

Rev.C

1/2

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