2SD2662T100 Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

2SD2662T100

NPN 1.5A 30V Middle Power Transistor

ROHM Semiconductor 

2SD2662

Data Sheet

lElectrical characteristic curves(Ta = 25°C)

Fig.9 Emitter input capacitance vs.

Emitter-Base Voltage

Collector output capacitance vs.

Fig.10 Safe Operating Area

Collector-Base Voltage

10

1

for1ms

10ms

100ms

ndeds COLLECTOR - BASE VOLTAGE : VCB [V]

Not RecNoemwmDeesign EMITTER-BASE VOLTAGE:VEB[V]

0.1

0.01

DC

(Mounted on a

reference land)

Ta=25ºC

Single non repetitive pulse

0.001

0.1

1

10

100

COLLECTOR TO EMITTER VOLTAGE : VCE [V]

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5/6

2013.07 - Rev.C

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