2SD2662T100 Просмотр технического описания (PDF) - ROHM Semiconductor
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2SD2662T100 Datasheet PDF : 7 Pages
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2SD2662
Data Sheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current
DC
Pulsed
or Power dissipation
f Junction temperature
d Range of storage temperature
*1 Pw=1ms , single pulse
e *2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7mm）
IC
ICP *1
PD *2
PD *3
Tj
Tstg
1.5
A
3.0
A
0.5
W
2.0
W
150
°C
-55 to +150
°C
nd s lElectrical characteristics (Ta = 25°C)
e n Parameter
Symbol
Conditions
Min.
Collector-emitter
m ig breakdown voltage
BVCEO IC = 1mA
30
Collector-base
s breakdown voltage
BVCBO IC = 10mA
30
Emitter-base
m e breakdown voltage
BVEBO IE = 10mA
6
o D Collector cut-off current
ICBO VCB = 30V
-
c Emitter cut-off current
e w Collector-emitter
saturation voltage
R e DC current gain
t N Transition frequency
No Output capacitance
IEBO VEB = 6V
-
VCE(sat) IC = 1A, IB = 50mA
-
hFE VCE = 2V, IC = 100mA 270
fT
VCE = 2V, IE = -100mA
f=100MHZ
-
Cob
VCB = 10V, IE = 0A
f = 1MHz
-
Typ.
-
-
-
-
-
160
-
330
11
Max.
-
-
-
100
100
350
680
-
-
Unit
V
V
V
nA
nA
mV
-
MHz
pF
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2013.07 - Rev.C
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