2SC4617EBTLQ Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

2SC4617EBTLQ

General purpose transistor (50V, 150mA)

ROHM Semiconductor 

2SC5658 / 2SC4617EB / 2SC4617 / 2SC4081UB / 2SC4081 / 2SC2412K

　　　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

2SC5658

2SC4617EB

2SC4617

2SC4081UB

2SC4081

2SC2412K

Symbol

VCBO

VCEO

VEBO

IC

ICP*1

PD*2

Tj

Tstg

Values

60

50

7

150

200

150

150

150

200

200

200

150

-55 to +150

Datasheet

Unit

V

V

V

mA

mA

mW

℃

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Collector-base breakdown

voltage

BVCBO IC = 50μA

Collector-emitter breakdown

voltage

BVCEO IC = 1mA

Emitter-base breakdown voltage BVEBO IE = 50μA

Collector cut-off current

ICBO VCB = 60V

Emitter cut-off current

IEBO VEB = 7V

Collector-emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA

DC current gain

hFE VCE = 6V, IC = 1mA

Transition frequency

fT

VCE = 12V, IE = -2mA,

f = 100MHz

Output capacitance

Cob

VCB = 12V, IE = 0A,

f = 1MHz

hFE values are calssified as follows :

rank

Q

R

hFE

120-270

180-390

*1 Pw=1ms, Single Pulse.

*2 Each terminal mounted on a reference land.

S

270-560

Values

Unit

Min. Typ. Max.

60 -

-

V

50 -

-

V

7

-

-

V

-

- 100 nA

-

- 100 nA

-

- 400 mV

120 - 560 -

- 180 - MHz

- 2.0 3.5 pF

-

-

-

-

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20150618 - Rev.002

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