045N10N(2010) Просмотр технического описания (PDF) - Infineon Technologies
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045N10N Datasheet PDF : 11 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=100 A; V GS=10 V
10
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
8
6
98 %
typ
4
3.5
3
1500 µA
2.5
150 µA
2
1.5
1
2
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
Ciss
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Coss
103
25 °C
175 °C, 98%
102
175 °C
25 °C, 98%
102
101
Crss
101
0
Rev. 2.5
20
40
60
V DS [V]
100
80
0
page 6
0.5
1
1.5
V SD [V]
2
2010-01-13
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