045N10N(2010) Просмотр технического описания (PDF) - Infineon Technologies
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Компоненты Описание
производитель
045N10N Datasheet PDF : 11 Pages
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Parameter
Symbol Conditions
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=50 A, R G=1.6 Ω
-
tf
-
6320
1210
41
27
59
48
14
8410 pF
1610
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q gd
-
Q sw
V DD=50 V, I D=100 A,
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=50 V, V GS=0 V
-
30
39 nC
16
-
27
-
88
117
4.7
-V
122
162 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=100 A,
T j=25 °C
t rr
V R=50 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
100 A
-
-
400
-
1.0
1.2 V
-
68
- ns
-
135
- nC
4) See figure 16 for gate charge parameter definition
Rev. 2.5
page 3
2010-01-13
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