DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

DAC8222G Просмотр технического описания (PDF) - Analog Devices

Номер в каталоге
Компоненты Описание
производитель
DAC8222G Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DAC8222–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VDD = +5 V or +15 V, VREF A = VREF B = +10 V, VOUT A = VOUT B = 0 V; AGND = DGND = 0 V;
TA = Full Temperature Range Specified in Absolute Maximum Ratings; unless otherwise noted. Specifications apply for DAC A and DAC B.)
Parameter
Symbol Conditions
Min
Typ
Max
Units
STATIC ACCURACY
Resolution
N
12
Relative Accuracy
INL Endpoint Linearity Error DAC8222A/E/G
DAC8222F/H
Differential Nonlinearity
Full-Scale Gain Error1
DNL
GFSE
All Grades are Guaranteed Monotonic
DAC8222A/E
DAC8222G
DAC8222F/H
Gain Temperature Coefficient
Gain/Temperature
Output Leakage Current
TCGFS (Notes 2, 7)
IOUT A (Pin 2),
IOUT B (Pin 24)
Input Resistance
ILKG
All Digital Inputs =
0000 0000 0000
TA = +25°C
TA = Full Temp. Range
(VREF A, VREF B)
RREF
(Note 9)
8
Input Resistance Match
RREF
RREF
DIGITAL INPUTS
Digital Input High
Digital Input Low
Input Current
Input Capacitance2
VINH
VINL
IIN
CIN
VDD = +5 V
2.4
VDD = +15 V
13.5
VDD = +5 V
VDD = +15 V
VIN = 0 V or VDD
TA = +25°C
and VINL or VINH
TA = Full Temp. Range
DB0–DB11
WR, LDAC, DAC A/DAC B
± 1/2
±1
±1
±1
±2
±4
±2
±5
±5
± 10
± 50
11
15
± 0.2
±1
0.8
1.5
± 0.001 ± 1
± 10
10
15
Bits
LSB
LSB
LSB
LSB
LSB
LSB
ppm/°C
nA
nA
k
%
V
V
V
V
µA
µA
pF
pF
POWER SUPPLY
Supply Current
DC Power Supply
Rejection Ratio
(Gain/VDD)
IDD
PSRR
All Digital Inputs VINL or VINH
All Digital Inputs 0 V or VDD
VDD = ± 5%
2
mA
10
100
µA
0.002 %/%
AC PERFORMANCE CHARACTERISTICS2
Propagation Delay4, 5
Current Settling Time5, 6
Output Capacitance
tPD
TA = +25°C
tS
TA = +25°C
CO
Digital Inputs = All 0s
COUT A, COUT B
Digital Inputs = All 1s
AC Feedthrough at
IOUT A or IOUT B
FTA
FTB
COUT A, COUT B
VREF A to IOUT A; VREF A = 20 V p-p;
f = 100 kHz; TA = +25°C
VREF B to IOUT B; VREF B = 20 V p-p;
f = 100 kHz; TA = +25°C
350
ns
1
µs
90
pF
90
pF
120
pF
120
pF
–70
dB
–70
dB
–70
dB
–70
dB
SWITCHING CHARACTERISTICS2, 3
VDD = +5 V
VDD = +15 V
+25°C –40°C to +85°C8 –55°C to +125°C All Temps10
DAC Select to
Write Set-Up Time
DAC Select to
Write Hold Time
LDAC to
Write Set-Up Time
LDAC to
Write Hold Time
Data Valid to
Write Set-Up Time
Data Valid to
Write Hold Time
Write Pulse Width
LDAC Pulse Width
tAS
tAH
tLS
tLH
tDS
tDH
tWR
tLWD
150 180
210
0
0
0
80
100
120
20
20
20
220 240
260
0
0
0
130 160
170
100 120
130
60
ns min
0
ns min
60
ns min
20
ns min
100
ns min
10
ns min
90
ns min
60
ns min
NOTES
11Measured using internal RFB A and RFB B. Both DAC digital inputs = 1111 1111 1111.
12Guaranteed and not tested.
13See timing diagram.
14From 50% of digital input to 90% of final analog output current.
VREF A = VREF B = +10 V; OUT A, OUT B load = 100 , CEXT = 13 pF.
15WR, LDAC = 0 V; DB0–DB11 = 0 V to VDD or VDD to 0 V.
16Settling time is measured from 50% of the digital input change to where the
output voltage settles within 1/2 LSB of full scale.
17Gain TC is measured from +25°C to TMIN or from +25°C to TMAX.
18 These limits apply for the commercial and industrial grade products.
19 Absolute temperature coefficient is approximately +50 ppm/°C.
10 These limits also apply as typical values for VDD = +12 V with +5 V CMOS
logic levels and TA = +25°C.
Specifications subject to change without notice.
–2–
REV. C

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]