PHE13009(2018) Просмотр технического описания (PDF) - Unspecified
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PHE13009 Datasheet PDF : 8 Pages
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WeEn Semiconductors
Silicon Diffused Power Transistor
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
HFE
50
30
20
15
10
5
1V
5V
2
0.01
Fig.8.
0.05 0.1
0.5
1
IC/A
23
5
12
Typical DC current gain. hFE = f(IC)
parameter VCE
VCEsat/V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.01
0.1
IB/A
1A
1
3A
2A
4A
10
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
Product data sheet
PHE13009
VBEsat VOLTAGE/V
1.4
1.3
1.2
1.1
IC/IB = 3
1
0.9
0.8
0.7
0.6
0.5
0.4
0.5
0.8
3
5
IC, COLLECTOR CURRENT/A
7
9
12
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =5.
VCEsat VOLTAGE/V
1.75
1.5
1.25
1
0.75
IC/IB = 3
0.5
0.25
0
0.5
0.8
3
5
IC, COLLECTOR CURRENT/A
7
9
12
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =5.
Zth / (K/W)
10
1
D= 0.5
0.2
0.1
0.1 0.05
0.02
0
PD
tp
tp
D= T
T
t
0.01
1E-06
1E-04
1E-02
t/s
1E+00
Fig.12. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
March 2018
4
Rev 1.100
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