PHE13009(2018) Просмотр технического описания (PDF) - Unspecified
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PHE13009 Datasheet PDF : 8 Pages
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WeEn Semiconductors
Silicon Diffused Power Transistor
Product data sheet
PHE13009
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
300R
1R
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
90 %
ICon
90 %
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.4. Switching times waveforms with resistive load.
VCC
250
100
10
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for VCEOsust.
VCC
VIM
RB
0
tp
T
RL
T.U.T.
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
IBon
-VBB
LC
LB
T.U.T.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
ICon
90 %
IC
10 %
ts
tf
t
toff
IB
IBon
t
-IBoff
Fig.6. Switching times waveforms with inductive load.
March 2018
3
Rev 1.100
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