PHE13009(2018) Просмотр технического описания (PDF) - Unspecified
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PHE13009 Datasheet PDF : 8 Pages
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WeEn Semiconductors
Silicon Diffused Power Transistor
Product data sheet
PHE13009
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
VCEsat
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
VBEsat
hFE
hFEsat
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VCEO = VCEOMmax (400V)
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 5.0 A;IB = 1.0 A
IC = 8.0 A;IB = 1.6 A
IC = 5.0 A;IB = 1.0 A
IC = 8.0 A;IB = 1.6 A
IC = 5.0 A; VCE = 5 V
IC = 8.0 A; VCE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
1.0 mA
-
5.0 mA
-
-
0.1 mA
-
-
1 mA
400
-
-
V
-
0.32 1.0
V
-
-
2.0
V
-
1.0 1.3
V
-
1.1 1.6
V
8
-
40
6
-
30
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 5 A; IBon = -IBoff = 1 A;
RL = 75 ohms; VBB2 = 4 V;
ICon = 5 A; IBon = 1 A; LB = 1 µH;
-VBB = 5 V
ICon = 5A; IBon = 1 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
TYP. MAX. UNIT
2.2 3.3 µs
0.26 0.7 µs
1.35 2.3 µs
0.1 0.5 µs
-
3.2 µs
-
0.9 µs
1 Measured with half sine-wave voltage (curve tracer).
March 2018
2
Rev 1.100
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