DMG2301U Просмотр технического описания (PDF) - ZP Semiconductor
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DMG2301U Datasheet PDF : 2 Pages
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DMG2301U
P-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
-20
±8
-2.7
-2.1
-2.1
-1.7
-27
Value
0.8
157
-55 to +150
Units
V
V
A
A
A
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
-20
⎯
IDSS
⎯
⎯
IGSS
⎯
⎯
VGS(th)
-0.45
⎯
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
⎯
VSD
⎯
Ciss
⎯
Coss
⎯
Crss
⎯
RG
⎯
Qg
⎯
Qgs
⎯
Qgd
⎯
tD(on)
⎯
tr
⎯
tD(off)
⎯
tf
⎯
Notes:
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature..
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
10
-0.75
608
82
72
44.9
6.5
0.9
1.5
12.5
10.3
46.5
22.2
Max
⎯
-1.0
±100
-1.0
80
110
⎯
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
40
30
140
66
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -16V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V
VDS = VGS, ID = -250μA
mΩ VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
S VDS = -5V, ID = -2.8A
V VGS = 0V, IS = -1A
pF
pF
VDS = -6V, VGS = 0V
f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V, ID = -3A
nC
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 10Ω, RG = 1.0Ω, ID = -1A
ns
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