IKP15N60T Просмотр технического описания (PDF) - Unspecified

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IKP15N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Unspecified 

TrenchStop Series

IKP15N60T

q

16A

TJ=175°C

14A

12A

10A

TJ=25°C

8A

6A

4A

2A

0A

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 15A,

Dynamic test circuit in Figure E)

-700A/µs

-600A/µs

TJ=175°C

-500A/µs

-400A/µs

TJ=25°C

-300A/µs

-200A/µs

-100A/µs

0A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, IF=15A,

Dynamic test circuit in Figure E)

40A

30A

20A

10A

TJ=25°C

175°C

2.0V

1.5V

1.0V

0.5V

IF=30A

15A

7.5A

0A

0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

0.0V

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

Power Semiconductors

10

Rev. 2.1 May 06

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