IGB15N60T Просмотр технического описания (PDF) - Unspecified

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IGB15N60T

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Unspecified 

IGB15N60T

TRENCHSTOP™ Series

q

100ns

10ns

td(on)

t

d(off)

tf

tr

1ns

0A

5A 10A 15A 20A 25A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, rG = 15Ω,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

10ns









tr



RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 15A,

Dynamic test circuit in Figure E)

100ns

td(off)

tf

t

d(on)

10ns

tr

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 15A, rG=15Ω,

Dynamic test circuit in Figure E)

7V

6V

max.

typ.

5V

4V min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction

temperature

(IC = 0.21mA)

IFAG IPC TD VLS

6

Rev. 2.6 30.04.2015

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