ZXMN6A08K Просмотр технического описания (PDF) - Diodes Incorporated.
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ZXMN6A08K Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXMN6A08K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
60
⎯
IDSS
⎯
⎯
IGSS
⎯
⎯
VGS(th)
1.0
⎯
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
gfs
⎯
6.6
VSD
⎯
0.88
trr
19.2
Qrr
⎯
30.3
Ciss
⎯
459
Coss
⎯
44.2
Crss
⎯
24.1
Qg
⎯
3.8
Qg
⎯
5.8
Qgs
⎯
1.4
Qgd
⎯
1.9
tD(on)
⎯
2.6
tr
⎯
2.1
tD(off)
⎯
12.3
tf
⎯
4.6
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Max
⎯
0.5
±100
3.0
0.080
0.150
⎯
0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V ID = 250μA, VGS= 0V
μA VDS= 60V, VGS= 0V
nA VGS= ±20V, VDS= 0V
V
ID= 250μA, VDS= VGS
Ω
VGS= 10V, ID= 4.8A
VGS= 4.5V, ID= 4.2A
S VDS= 15V, ID= 4.8A
V IS= 4.0A, VGS= 0V
ns
nC IS= 1.4A, di/dt= 100A/μs
pF
pF
VDS= 40V, VGS= 0V
f= 1MHz
pF
nC VGS= 4.5V
nC
nC VGS= 10V
nC
VDS= 30V
ID= 1.4A
ns
ns VDD= 30V, VGS= 10V
ns ID= 1.5A, RG ≅ 6.0Ω
ns
ZXMN6A08K
Document Revision: 2
4 of 8
www.diodes.com
July 2009
© Diodes Incorporated
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