ZXM66P02N8 Просмотр технического описания (PDF) - Diodes Incorporated.
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ZXM66P02N8 Datasheet PDF : 5 Pages
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Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Continuous Drain current
VGS = 4.5V
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA = 70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
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Diodes Incorporated
ZXM66P02N8
Value
Unit
-20
V
±12
V
-8.0
-6.5
A
-6.4
-28
A
-4.15
A
-28
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Power dissipation
Linear derating factor
Characteristic
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 2)
(Note 3)
Symbol
PD
RθJA
TJ, TSTG
Value
1.56
12.5
2.5
20
80
50
-55 to 150
Notes:
2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. Same as note (3), except the device is measured at t ≤ 10 sec.
4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs – pulse width limited by maximum junction temperature.
Unit
W
mW/°C
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
-20
⎯
IDSS
⎯
⎯
IGSS
⎯
⎯
VGS(th)
-0.7
⎯
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
gfs
⎯
13.3
VSD
⎯
⎯
trr
23.1
Qrr
⎯
12.2
Ciss
⎯
2068
Coss
⎯
1038
Crss
⎯
506
Qg
⎯
43.3
Qgs
⎯
3.5
Qgd
⎯
21.3
tD(on)
⎯
14.0
tr
⎯
44.3
tD(off)
⎯
118.4
tf
⎯
98.4
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
2 of 5
www.diodes.com
Max
⎯
-1
-100
⎯
0.025
0.045
⎯
0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V ID = -250μA, VGS = 0V
μA VDS = -16V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V
ID = -250μA, VDS = VGS
Ω
VGS = -4.5V, ID = -3.2A
VGS = -2.5V, ID = -2.7A
S VDS = -10V, ID = -3.2A
V IS = -3.2A, VGS = 0V
ns
nC IF = -3.2A, di/dt = 100A/μs
pF
pF VDS = -15V, VGS = 0V
F = 1MHz
pF
nC
nC VGS = -4.5V, VDS = -10V,
ID = -3.2A
nC
ns
ns VDD = -10V, VGS = -5V
ns ID = -3.2A, RG = 6.0Ω
ns
October 2009
© Diodes Incorporated
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