ZXM66P02N8 Просмотр технического описания (PDF) - Diodes Incorporated.
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ZXM66P02N8 Datasheet PDF : 5 Pages
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A Product Line of
Diodes Incorporated
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on)
-20V
0.025Ω
ID
-8.0A
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Features and Benefits
• High pulse current handling in linear mode
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low profile SOIC package
Description and Applications
This high density MOSFET utilizes a unique structure that combines
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
• Inrush protection circuits
• DC-DC Converters
• Power management functions
• Disconnect switches
• Motor control
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)
SO-8
D
G
Top View
Top View
S
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXM66P02N8TA
Marking
See below
Notes: 1. For packaging details, go to our website.
Marking Information
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
ZXM
66P02
YYWW
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1 of 5
www.diodes.com
October 2009
© Diodes Incorporated
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