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ZXM61P03F Просмотр технического описания (PDF) - Diodes Incorporated.

Номер в каталоге
Компоненты Описание
производитель
ZXM61P03F
Diodes
Diodes Incorporated. Diodes
ZXM61P03F Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ZXM61P03F
TYPICAL CHARACTERISTICS
300
250
200
150
Vgs=0V
f=1MHz
Ciss
Coss
Crss
100
50
0
0.1
1
10
100
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
14
ID=-0.6A
12
10
VDS=-24V
8
VDS=-15V
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VG
QGS
QG
QGD
Charge
Basic gate charge waveform
Current
regulator
12V
50k
Same as
D.U.T
IG
D.U.T
VGS
VDS
ID
Gate charge test circuit
VDS
90%
tr
td(off)
t(on)
tr
td(on)
t(on)
10%
VGS
Switching time waveforms
VGS
RG
RD
VDS
VCC
Switching time test circuit
ISSUE 1 - OCTOBER 2005
6
SEMICONDUCTORS

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