ZXMN2A03E6TC Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMN2A03E6TC

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN2A03E6

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS 20

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

0.7

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

12

DYNAMIC (3)

V

1

µA

100

nA

V

0.055 Ω

0.100 Ω

S

ID=250µA, VGS=0V

VDS=20V, VGS=0V

VGS=±12V, VDS=0V

I =250µA,

D

VDS=

VGS

VGS=4.5V, ID=7.2A

VGS=2.5V, ID=3.6A

VDS=10V,ID=7.2A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

823

pF

VDS=15 V, VGS=0V,

159

pF f=1MHz

93

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

4.3

8.0

17.7

10.0

8.6

1.9

2.5

ns

ns VDD =10V, ID=3.5A

ns

RG=6.0Ω, VGS=5V

ns

nC

VDS=10V,VGS=4.5V,

nC ID=3.5A

nC

Diode Forward Voltage (1)

VSD

0.85 0.95

Reverse Recovery Time (3)

trr

14.2

Reverse Recovery Charge (3)

Qrr

7.2

NOTES

(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

TJ=25°C, IS=4.2A,

VGS=0V

ns TJ=25°C, IF=3.5A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE C - NOVEMBER 2001

3

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