ZXMN10A11K Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMN10A11K

100V DPAK N-channel enhancement mode MOSFET

Zetex => Diodes 

ZXMN10A11K

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Static

Drain-source breakdown

voltage

V(BR)DSS

Zero gate voltage drain

IDSS

current

Gate-body leakage

IGSS

Gate-source threshold voltage VGS(th)

Static drain-source on-state

resistance (*)

RDS(on)

Min.

100

2.0

Forward transconductance(*) (‡) gfs

Dynamic(‡)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Switching (†) (‡)

Turn-on-delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Gate charge

Qg

Total gate charge

Qg

Gate-source charge

Qgs

Gate drain charge

Qgd

Source-drain diode

Diode forward voltage(*)

VSD

Reverse recovery time (‡)

trr

Reverse recovery charge(‡) Qrr

Typ. Max. Unit Conditions

V ID= 250␮A, VGS=0V

1

␮A VDS= 100V, VGS=0V

100 nA VGS=±20V, VDS=0V

4.0

V ID= 250␮A, VDS=VGS

0.350 ⍀ VGS= 10V, ID= 2.6A

0.450 ⍀ VGS= 6V, ID = 1.3A

4

S VDS= 15V, ID= 2.6A

274

pF VDS= 50V, VGS=0V

21

pF f=1MHz

11

pF

2.7

ns VDD= 50V, ID= 1A

1.7

ns RG≅6.0⍀, VGS= 10V

7.4

ns

3.5

ns

3

nC VDS= 50V, VGS= 5V

ID= 2.5A

5.4

nC VDS= 50V, VGS= 10V

1.4

nC ID= 2.5A

1.5

nC

0.85 0.95

26

30

V Tj=25°C, IS= 1.85A,

VGS=0V

ns Tj=25°C, IS= 1A,

nC di/dt=100A/␮s

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Issue 1 - August 2006

4

© Zetex Semiconductors plc 2006

www.zetex.com

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