ZXMN10A11K Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMN10A11K

100V DPAK N-channel enhancement mode MOSFET

Zetex => Diodes 

ZXMN10A11K

100V DPAK N-channel enhancement mode MOSFET

Summary

V(BR)DSS

100

RDS(on) (⍀)

0.350 @ VGS= 10V

0.450 @ VGS= 6V

ID (A)

3.5

3.1

Description

This new generation trench MOSFET from Zetex features a unique

structure combining the benefits of low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• DPAK package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device

ZXMN10A11KTC

Reel size

(inches)

13

Tape width

(mm)

16

Quantity per reel

2,500

Device marking

ZXMN

10A11

D

G

S

D

D

G

S

Pinout - top view

Issue 1 - August 2006

1

© Zetex Semiconductors plc 2006

www.zetex.com

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