ZXMD65P03N8TC Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMD65P03N8TC

DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD65P03N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNI CONDITIONS.

T

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -30

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

-1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

V ID=-250µA, VGS=0V

-1

µA VDS=-24V, VGS=0V

-100

nA VGS=±12V, VDS=0V

V

I =-250µA,

D

VDS=

VGS

0.055 Ω VGS=-10V, ID=-4.9A

0.080 Ω VGS=-4.5V, ID=-3.6A

8.8

S VDS=-15V,ID=-4.9A

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING(2) (3)

930

pF

VDS=-25 V, VGS=0V,

311

pF f=1MHz

113

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

td(on)

tr

td(off)

tf

Qg

3.8

6.4

49.5

26.2

13

ns

ns VDD =-15V, ID=-4.9A

ns RG=6.0Ω, VGS=-10V

ns

nC VDS=-15V,VGS=-5V

ID=-4.9A

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

Qg

25.7

Qgs

3.2

Qgd

7.0

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

31.5

Reverse Recovery Charge(3)

Qrr

63.9

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

nC

VDS=-15V,VGS=-10V

nC ID=-4.9A

nC

V Tj=25°C, IS=-4.9A,

VGS=0V

ns Tj=25°C, IF=-4.9A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE A - MAY 2001

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