ZXCT1032 Просмотр технического описания (PDF) - Diodes Incorporated.

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ZXCT1032

High-side inrush controller and electronic fuse

Diodes Incorporated. 

ZXCT1032

Absolute maximum ratings

VIN+ max(a) ...................................................................................................... 28 V

Voltage on any pin relative to GND ............................................................. -0.6V and VIN +0.5 V

Maximum differential voltage between VIN+ and VIN- (VSENSE) ................ 500 mV

Junction temperature range ........................................................................ -40 to 150°C

Storage temperature range .......................................................................... -55 to 150°C

Operation above the absolute maximum rating may cause device failure. Operation at the

absolute maximum ratings, for extended periods, may reduce device reliability.

NOTES:

(a) Up to a maximum of 24 hours

Recommended operating conditions

Symbol

VIN+

TA

VFLAG

VISET

Parameter

Supply range

Ambient temperature range

Flag voltage range

Voltage on ISET pin

Min.

9.5

-40

0

1

Max.

21

85

VIN+

2.5

Units

V

°C

V

V

Electrical characteristics

Test conditions Tamb = 25°C, VIN+ = 20V. Unless otherwise stated.

Symbol Parameter

Conditions

Min. Typ. Max. Units

IQ Quiescent current

VSENSE1 = 0V, V_ISET = 2.1V

1.6 2.5 mA

VSTRIP(*) Flag trip threshold

voltage

VISET =1.1V

VISET =2.1V

95

mV

185 195 205

VISET ISET open voltage

IISET = 0

2.0 2.1 2.2 V

IISET ISET output current

VISET =0V

30

45

60 ␮A

VDRIVEH Drive high output

VISET = 2.1V, VSENSE > 205mV,

VIN- VIN-

V

voltage

IDRIVE = 0,

– 0.4 – 0.2

VDRIVEL Drive low output voltage VISET = 2.1V, VSENSE < 185mV,

IDRIVE = 0,

VIN- VIN- VIN- - V

- 7 - 5.5 4

RDRIVEL Drive low output resistance VISET = 2.1V, VSENSE < 185mV

9

k⍀

VFLAGL Flag Low output Voltage VISET = 2.1V, VSENSE > 205mV

IFLAG = 100µA

0.2 0.4 V

IFLAGZ Flag open circuit leakage VISET = 2.1V, VSENSE < 185mV,

current

VFLAG = 5V

1 200 nA

IIN- IN- bias current

VISET = 0V

100 200 nA

VSTRIP-TC Temperature coefficient See footnote (†)

of trip voltage

95

ppm/°C

ICT-CHG Capacitor CT charging

current

FLAG = Open

130 200 270 ␮A

ICT-DIS Capacitor CT discharging FLAG = Low

current

1.8 3.3 5.4 ␮A

NOTES:

(*) VSENSE = VIN+ - VIN-. VSTRIP is the sense voltage at which the device trips into over-current protection.

(†) Temperature dependent measurements are extracted from characterization and simulation results.

Issue 3 - April 2007

3

© Zetex Semiconductors plc 2007

www.zetex.com

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