VND10B Просмотр технического описания (PDF) - STMicroelectronics

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производитель

VND10B

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics 

VND10BSP

ABSOLUTE MAXIMUM RATING

Symbol

Parameter

V(BR)DSS Drain-Source Breakdown Voltage

IOUT Output Current (cont.) at Tc = 85 oC

IOUT(RMS) RMS Output Current at Tc = 85 oC and f > 1Hz

IR

Reverse Output Current at Tc = 85 oC

IIN

Input Current

-VCC Reverse Supply Voltage

ISTAT Status Current

VESD

Ptot

Electrostatic Discharge (1.5 kΩ, 100 pF)

Power Dissipation at Tc = 25 oC

Tj

Junction Operating Temperature

Tstg Storage Temperature

CONNECTION DIAGRAMS

Value

40

14

14

-14

±10

-4

±10

2000

75

-40 to 150

-55 to 150

Unit

V

A

A

A

mA

V

mA

V

W

oC

oC

CURRENT AND VOLTAGE CONVENTIONS

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