ZC826 Просмотр технического описания (PDF) - Zetex => Diodes
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ZC826 Datasheet PDF : 2 Pages
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SILICON ION-IMPLANTED
HYPERABRUPT TUNER DIODES
ISSUE 2 MARCH 94
DIODE PIN CONNECTION
ZC820
SERIES
1
CATHODE
2
ANODE
1
2
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Reverse Voltage
VR
Forward Current
IF
Power Dissipation at Tamb=25°C
Ptot
Junction Temperature
Tj
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
PARAMETER
SYMBOL MIN TYP MAX
Reverse Voltage Leakage
IR
Temperature Coefficient
η
of Capacitance
0.03
0.02
0.04
MAX
25
200
300
125
-55 to +200
UNIT
V
mA
mW
°C
°C
UNIT CONDITIONS
µA
%/°C VR=3V
TUNING CHARACTERISTICS (at Tamb =25°C)
PART
NO
Nominal Capacitance
in pF
@ VR=2V, f=1MHz
MIN
NOM
MAX
Minimum
Q
@ VR=3V
f=50MHz
ZC820
8
10
12
300
ZC821
12
15
18
300
ZC822
17.6
22
26.4
200
ZC823
26.4
33
39.6
200
ZC824
37.6
47
56.4
200
ZC825
54.4
68
81.6
100
ZC826
80
100
120
100
*Available with 2V nominal capacitance ±10 suffix A, ± 5% suffix B
Capacitance Ratio
C2 /C20,
at f=1MHz
MIN
MAX
5
6.5
5
6.5
5
6.5
5
6.5
5
6.5
5
6.5
5
6.5
3-107
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