TGF1350-SCC(2002) Просмотр технического описания (PDF) - TriQuint Semiconductor
Номер в каталоге
Компоненты Описание
производитель
TGF1350-SCC Datasheet PDF : 7 Pages
| |||
TABLE II
DC PROBE TEST
(TA = 25 °C ± 5 °C)
Product Data Sheet
February 1, 2002
TGF1350-SCC
Symbol
Idss
VP
BVGS
BVGD
Parameter
Minimum Maximum Unit
Saturated Drain Current
30
84
mA
Pinch-off Voltage
-1.8
-0.5
V
Breakdown Voltage Gate-
-30
Source
Breakdown Voltage Gate-
-30
Drain
-6
V
-6
V
TABLE III
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
FET Parameters
IDSS : Maximum drain current (IDS) with gate voltage
(VGS) at zero volts.
VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of
gate width.
VBVGD : Breakdown Voltage, Gate-to-Drain; gate-to-
drain breakdown current (IBD) = 1.0 mA/mm
of gate width.
VBVGS : Breakdown Voltage, Gate-to-Source; gate-to-
source breakdown current (IBS) = 1.0 mA/mm
of gate width.
Test Conditions
VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V
up to a maximum of 3.5 V in search of the maximum
value of IDS; voltage for IDSS is recorded as VDSP.
VDS fixed at 2.0 V, VGS is swept to bring IDS to
0.5 mA/mm.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (VGD) measured is VBVGD and recorded as
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (VGS) measured is VBVGS and recorded
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
3
Share Link: 