TGF1350-SCC(2002) Просмотр технического описания (PDF) - TriQuint Semiconductor

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производитель

TGF1350-SCC
(Rev.:2002)

Discrete MESFET

TriQuint Semiconductor 

Product Data Sheet

February 1, 2002

TGF1350-SCC

TABLE I

MAXIMUM RATINGS

Symbol

V+

V-

PD

TCH

TM

TSTG

Parameter 4/

Positive Supply Voltage

Negative Supply Voltage Range

Power Dissipation

Operating Channel Temperature

Mounting Temperature

(30 Seconds)

Storage Temperature

Value

8V

-6V TO 0V

0.7 W

150 0C

320 0C

-65 to 150 0C

Notes

3/

1/ 2/

1/ These ratings apply to each individual FET.

2/ Junction operating temperature will directly affect the device median time to failure (TM). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

3/ Power dissipation, PD is at (or below) 25°C base-plate temperature. For operation above 25°C

base-plated temperature, derate linearly at the rate of 1.4 mW/ °C

4/ These ratings represent the maximum operable values for this device.

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

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