XD010-24S-D2F(RevC) Просмотр технического описания (PDF) - Sirenza Microdevices => RFMD

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производитель

XD010-24S-D2F
(Rev.:RevC)

1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier

Sirenza Microdevices => RFMD 

XD010-24S-D2F 1930-1990 MHz 12W Power Amp Module

Quality Specifications

Parameter

ESD Rating

Human Body Model, JEDEC Document - JESD22-A114-B

MTTF

85oC Baseplate, 200oC Channel

Unit Typical

V

8000

H

1.2 X 106

Pin Out Description

Pin #

Function

Description

1

RF Input

Module RF input. Care must be taken to protect against video transients that may damage the active devices.

2

VD1

This is the bias feed for the 1st stage of the amplifier module. The gate bias is temperature compensated to maintain con-

stant current over the operating temperature range. See Note 1.

3,4

VD2

This is the bias feed for the 2nd stage of the amplifier module. The gate bias is temperature compensated to maintain con-

stant current over the operating temperature range. See Note 1.

5

RF Output Module RF output. Care must be taken to protect against video transients that may damage the active devices.

Flange

Gnd

Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for

optimum thermal and RF performance. See mounting instructions for recommendation.

Simplified Device Schematic

2 VD1

3 4 VD2

RF

in

1

Temperature

Compensation

Q1

Temperature

Compensation

Q2

RF

out

5

Case Flange = Ground

Absolute Maximum Ratings

Parameters

Value

Unit

1st Stage Bias Voltage (VD1 )

2nd Stage Bias Voltage (VD2)

35

V

35

V

RF Input Power

+20

dBm

Note 1:

The internally generated gate voltage is thermally compensated

to maintain constant quiescent current over the temperature

range listed in the data sheet. No compensation is provided for

gain changes with temperature. This can only be accomplished

with AGC external to the module.

Load Impedance for Continuous Operation

Without Damage

Output Device Channel Temperature

Operating Temperature Range

Storage Temperature Range

5:1

+200

-20 to +90

-40 to

+100

VSWR

ºC

ºC

ºC

Note 2:

Internal RF decoupling is included on all bias leads. No addi-

tional bypass elements are required, however some applica-

tions may require energy storage on the drain leads to

accommodate time-varying waveforms.

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation

see typical setup values specified in the table on page one.

Caution: ESD Sensitive

Appropriate precaution in handling, packaging

and testing devices must be observed.

303 S. Technology Court

Phone: (800) SMI-MMIC

Broomfield, CO 80021

2

Note 3:

This module was designed to have its leads hand soldered to an

adjacent PCB. The maximum soldering iron tip temperature

should not exceed 700° C, and the soldering iron tip should not

be in direct contact with the lead for longer than 10 seconds.

Refer to app note AN060 (www.sirenza.com) for further installa-

tion instructions.

http://www.sirenza.com

EDS-102932 Rev C

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