DFH10T Просмотр технического описания (PDF) - SANYO -> Panasonic
Номер в каталоге
Компоненты Описание
производитель
DFH10T Datasheet PDF : 2 Pages
| |||
Ordering number:EN2374
DFH10T
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R).
· Peak reverse voltage:VRM=100 to 1500V
· Average rectified current IO=1.0A
Package Dimensions
unit:mm
1175
[DFH10T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
C:Cathode
A:Anode
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
DFH10TB DFH10TC DFH10TE DFH10TG Unit
VRM
IO
IFSM
Tj
Tstg
Ta=25˚C
50Hz sine wave, 1 cycle
100
200
400
600 V
→
→
→
1.0 A
→
→
→
60 A
→
→
→
150 ˚C
→
→
→ –40 to +150 ˚C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
DFH10TJ DFH10TL DFH10TN DFH10TR Unit
VRM
IO
IFSM
Tj
Tstg
Ta=25˚C
50Hz sine wave, 1 cycle
800
1000
1200
1500 V
→
→
→
1.0 A
→
→
→
40 A
→
→
→
125 ˚C
→
→
→ –40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Reverse Recovery Time
VF
IF=1.0A (B, C, E, G)
IF=1.0A (J, L, N, R)
IR
VR:At each VRM
trr
IF=2mA, VR=15V (B,C, E, G)
IF=2mA, VR=15V (J, L, N, R)
Reverse Recovery Time Test Circuit
Ratings
Unit
min
typ
max
1.2 V
1.5 V
10 µA
0.15 µs
0.3 µs
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53098HA (KT)/7067AT, TS No.2374-1/2
Share Link: 