DLA11C Просмотр технического описания (PDF) - SANYO -> Panasonic
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DLA11C Datasheet PDF : 3 Pages
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Ordering number : ENN2795B
DLA11C
Silicon Diffused Junction Type
DLA11C
1.1A Ultrahigh-Speed Rectifier
Features
Package Dimensions
• Supports automatic mounting and permits DLA11C- unit : mm
applied sets to be made smaller.
1188
• Fast reverse recovery time and small switching loss.
• Peak reverse voltage : VRM=200V.
• Average rectified current : IO=1.1A.
[DLA11C]
Cathode mark
0.1
5.0
Specifications
Absolute Maximum Ratings at Ta=25°C
1.2
1.2
Parameter
Peak Reverse Voltage
Symbol
VRM
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz sine wave, mounted on alumina board
Resistive load resistor, mounted on PCB
50Hz sine wave, nonrepetitive, 1 cycle peak value
Parameter
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Marking : LA
Symbol
Conditions
min
VF
IF=1.1A
IR
VR=200V
trr
IF=0.5A, IR=1A
θj-l
Junction–Lead
Junction–Ambient Mounted on alumina board
θj-a
Mounted on PCB
Ratings
Unit
200
V
1.1
A
0.84
A
30
A
150
°C
--55 to +150
°C
Ratings
typ
max
0.98
10
50
23
108
157
Unit
V
µA
ns
°C / W
°C / W
°C / W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM / 53098 HA (KT) / 92295 GI (KOTO) / 5108 TA, TS No.2795-1/3
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