MC100ELT25DR2G(2015) Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MC100ELT25DR2G
(Rev.:2015)

-5 V Differential ECL to TTL Translator

ON Semiconductor 

MC10ELT25, MC100ELT25

Table 7. AC CHARACTERISTICS VCC= 5.0 V; VEE= −5.0 V; GND= 0 V (Note 9 and Note 10)

−40°C

25°C

85°C

Symbol

Characteristic

fmax

Maximum Toggle Frequency

tPLH

Propagation Delay @ 1.5 V

tPHL

Propagation Delay @ 1.5 V

tJITTER

tr

tf

Random Clock Jitter (RMS)

Output Rise/Fall Times QTTL

10% − 90%

VPP

Input Swing (Note 11)

Min Typ Max Min Typ Max Min Typ Max Unit

100

MHz

1.7

3.6 1.7

3.6 1.7

3.6 ns

2.6

4.1 2.6

4.1 2.6

4.1 ns

35

ps

1.9

ns

2.3

200

1000 200

1000 200

1000 mV

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm.

9. VCC can vary ± 0.25 V.

VEE can vary +0.06 V to −0.5 V for 10ELT; VEE can vary +0.8 V to −0.5 V for 100ELT.

10. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 2.

11. VPP(min) is the minimum input swing for which AC parameters are guaranteed. The device has a DC gain of ≈ 40.

APPLICATION

TTL RECEIVER

CHARACTERISTIC TEST

*CL includes

CL*

fixture

capacitance

RL

AC TEST LOAD

GND

Figure 2. TTL Output Loading Used for Device Evaluation

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